At present, China mainly uses silicon powder direct nitriding to produce silicon nitride powder. This traditional technology produces high content of powder impurities, high power consumption, low efficiency, and is not easy to form large-scale production. In view of this, nanotechnology experts began. From the gas phase method research to find a way out, that is, through the high-temperature gas phase reaction, one-step ultra-fine powder is produced. In the gas phase method, the plasma arc-gas phase synthesis technology is considered to be the current advanced technical expert identification, which is designed and developed by the company. There are four innovations in the production line: the plasma arc three-stage compression technology makes the diameter of the plasma beam limited to less than 10 mm, which is conducive to energy concentration. Secondly, the designed multi-component rapid synthesis device ensures a multi-ambient atmosphere. Chemical vapor phase synthesis in the plasma arc temperature zone; third, the design of nitrogen cooling wells can effectively prevent the growth of powder particles during the gradient cooling wall collection process; Fourth, the gas-solid separation technology and electrostatic collection technology, Increased collection rate of nano-silicon nitride powder Nano-silicon nitride powder prepared by these techniques, with an average particle size of 20 nm, pure According to reports, in this production line, nano-silicon carbide, silicon carbonitride, titanium carbonitride and other powders can be produced. After several months of trial production, nanometer nitriding is produced every hour. Compared with similar products, the high efficiency of silicon powder of more than 5 kg, the production cost is greatly reduced, and the price has a strong competitive advantage.
silicon nitride semiconductor industry information
Regarding the technical methods, research progress and application prospects of ceramic and metal brazing, ceramic and metal brazing have been mature at low temperature (below 1000 °C), but at high temperatures, this is not perfect, so the ceramic metal at high temperature Brazing technology will be the focus of future development. The interface reaction between ceramic and metal brazing involves very complicated physical and chemical problems. At present, there is still no systematic theory in this respect. Thermodynamic and kinetic data on interface products. It needs to be further supplemented and improved, so as to lay a theoretical foundation for the prediction of interface products and the study of reaction process dynamics.
silicon nitride semiconductor related applications
The ceramic silicon nitride is heat-resistant and can still have high strength and stiffness at 1400 °C (but the mechanical strength will decrease when it exceeds 1200 °C), but it is brittle. The reinforced ceramics with continuous fiber reinforcement can be applied to turbine parts, especially It is a ceramic blade for small engines, a turbine outer ring and an air bearing. In addition, silicon nitride ceramics have a lower specific density and a density of only 41% of steel bearings, which can effectively reduce the weight of aircraft engines and reduce fuel consumption.
Silicon nitride semiconductor preparation method
2019 11/18