What is aluminum nitride film?
2020 01/07
The aluminum nitride film refers to an aluminum nitride cover layer prepared by vapor deposition, liquid deposition, surface conversion, or other surface technologies. Aluminum nitride (AIN) is the only stable phase in the AI-N binary system. It has a covalent bond and a hexagonal wurtzite structure. It cannot be melted under normal pressure, but it can decompose at 2500K. 6.2eV can also be doped into a wide band gap semiconductor material. The aluminum nitride film refers to an aluminum nitride cover layer prepared by vapor deposition, liquid deposition, surface conversion, or other surface technologies. Aluminum nitride (AIN) is the only stable phase in the AI-N binary system. It has a covalent bond and a hexagonal wurtzite structure. It cannot be melted under normal pressure, but it can decompose at 2500K. 6.2eV can also be doped into a wide band gap semiconductor material. Aluminum nitride has higher electrical resistivity, lower thermal expansion coefficient, higher hardness, and better chemical stability. However, unlike ordinary insulators, its thermal conductivity is also very high. Aluminum nitride has high optical transmission in the entire visible and infrared bands. Aluminum nitride film has a very broad application prospect in microelectronics and optoelectronic devices, substrate materials, insulating layer materials, and packaging materials. Because of its high surface acoustic wave velocity and piezoelectricity, it can be used as a surface acoustic wave device. In addition, aluminum nitride has good abrasion and corrosion resistance and can be used as a protective film. The aluminum nitride film was first prepared by chemical vapor deposition (CVI), and its deposition temperature was over 1000 degrees Celsius. Later, by using plasma-enhanced chemical vapor deposition, or physical vapor deposition ((PVD)), the deposition temperature was gradually reduced below 500 degrees Celsius, and can even be deposited near room temperature. Most aluminum nitride films are polycrystalline However, a single crystal aluminum nitride film has been successfully epitaxially grown on a sapphire substrate. In addition, an amorphous aluminum nitride film has also been deposited.